A number of new semiconductor families are emerging that demand greater interconnect densities than possible with traditional organic substrate fabrication technology. Two alternative base materials have already evolved as more suitable for both current and future, very high-density package interposer applications; silicon and glass. Both materials, however, require adopting unique via formation and metallization methodologies. While the infrastructure for supplying the glass-based interposer is currently in development by a number of organizations, the silicon-based interposer supply infrastructure is already well established.
This paper outlines both positive and negative aspects of current 3D package innovations and addresses the challenges facing adopters of silicon and glass based interposer fabrication. The material presented will also reference 3D packaging standards and recognize innovative technologies from a number of industry sources, roadmaps and market forecasts.
Key words: 2.5D, 3D Semiconductor Package Technology, Through Silicon Via, TSV, Through Glass Via, TGV
Introduction
A majority of the semiconductor die elements continue to be designed with bond sites at the perimeter edge. For a wide range of applications, both single and multiple die-stack package assembly processes will likely continue to employ conventional face-up die attach and wire-bond methodology. The use of wire-bond interconnect as the exclusive means of termination, however, is somewhat restrictive because it requires significant surface area to accommodate the die-to-interposer wire-bond process. In regard to die-stack package assembly, managing the layout of several hundred interconnects and their wire-loop profile restrictions will entail a great deal of planning.
Even though a great deal of progress has been made in process refinement and system development, methodologies will vary a great deal. To ensure a strong infrastructure for 2.5D and 3D applications the industry will need a degree of harmonization and standardization. There are a number of multiple die package issues that will need to be resolved, including;
Selection of suitable component functions for multiple die packaging
Establish a reliable source for semiconductor elements
Specify physical and environmental operating conditions
Define package design constraints and understand process protocols
Stipulate electrical test method and post assembly inspection criteria
3D Semiconductor Package Innovations
Within the current decade the industry has developed an impressive family of multiple die solutions. A majority of the innovations utilized the existing package manufacturing infrastructure while others require the development of specialized materials and process systems. The organic interposer base will likely remain popular for a significant number of multiple die applications. To enable more efficient processing of multiple die sets, the substrates are furnished in a panel or strip format. In regard to assembly, when stacking two or more semiconductors onto a single interposer substrate for wire-bond assembly, the die elements will ideally have a progressively smaller outline. This tiered or pyramid die format has been very successful, generally furnishing the lowest overall multiple die package profile.
In this configuration, each die element is sequentially attached on top of one another. The progressively smaller die outline leaves the edge of all die elements accessible for wire-bond processing in a single operation.
Following molding operations, alloy ball contacts are commonly applied in the now familiar array format on the opposite surface of the interposer to accommodate electrical test and the eventual mounting of the finished package on the next level assembly. Because these heterogeneous die elements are mounted onto a single high-density interposer structure, the primary signal paths can be very short, contributing to increasing operating speed and power reduction. Although multiple die package technology has reached a level of maturity, package assembly yield may be adversely impacted when one or more die in the stack do not perform to their expected level or fail altogether.
When die elements have the same outline or nearly the same outline, thin silicon spacers are added between die elements to accommodate wire-bond loop heights. The example furnished in Figure 2 represents a stacked die assembly using a number of semiconductor die elements having the same outlines.
Excessive overall package height can be a critical roadblock for a number of personal hand-held product applications. For example, same size die elements generally represent memory functions. Unlike the tiered die assembly noted above, the memory die-stack process is less efficient. Although all memory die elements are assembled onto a common interposer base, die-attach and wire-bond operations for each die element must be completed before progressing to the next level. Even though the die elements can be made very thin, the accumulated stack-up height generated by the added spacer and wire-bond loop profile may not meet all package profile requirements.
3D Package-on-Package Solutions for Heterogeneous Applications
Combining the memory and logic functions in a single package outline has often compromised both test efficiency and overall package assembly yield. Vertically mounting one or more pre-packaged die elements (package-on-package) has evolved as a preferred alternative to die stacking, especially for applications requiring multiple heterogeneous semiconductor elements and, separating dissimilar logic and memory functions has proved to be very efficient. The logic die element often have a significantly larger outline and a greater number of I/O than the memory elements. For this reason, the base or lower package section will typically accommodate the logic while the memory functions associated with the logic die will be
deployed to the upper section of the package. Additionally, the package sections may utilize both wire-bond and flip-chip assembly methodologies. The flip-chip assembly will enable significant in-package interconnect capability and provide a very low package profile for the bottom section. This design illustrated in Figure 3 allows the mold material to extend out to the edge of the interposer on the lower section to minimize package warp and utilizes a through-mold-via (TMV) enabling smaller and closer pitch contact features between the upper and lower section.
Even though two substrate interposers are required for the PoP application, the joining of individually tested package sections have proved more economical.
Many of the more advanced 3D package solutions involved a great deal of engineering resources before they were made available for volume manufacturing and, although widely available, some variations will require licensing agreements with the developer before use.
Bond Via Array PoP
To overcome the limiting aspects of the more traditional PoP assembly method shown above, an alternative high-density substrate interconnect solution has evolved. The bond via array process enables a substantial reduction in interface contact pitch between the lower and upper package sections. The main feature of the bond via array concept is the use of commercially available organic based substrate materials and conventional wire-bond systems to furnish the closely spaced narrow copper-post contacts that provide electrical interface between upper and lower package sections. The detail shown in Figure 4 illustrates the upper and lower sections of the bond via array package.
Evolving 2.5D Interposer Technology
New semiconductor families are emerging that demand greater interconnect densities than possible with today’s organic substrate fabrication technology. Two alternative base materials have already proved to be more suitable for the both current and future very high-density package applications. The two base materials with the physical attributes considered most capable for the very high-density interposers are silicon and glass. Both materials, however, require adopting unique via formation and metallization methodologies to enable the interface between one side of the interposer to the other. The term
through-silicon-via (TSV) is applied to miniature ablated and plated via features in the silicon-based interposer. Likewise, furnishing similar features on the glass-based interposer is referred to as Though-Glass-Via (TGV). While the infrastructure for supplying the glass-based interposer is progressing, the silicon-based interposer supply infrastructure is already well established.
Silicon Interposer Fabrication
A great deal of resources have already been invested to bring TSV into a viable interconnect solution for both 2.5D interposers and 3D stacked-die assembly. In preparation for TSV, small diameter holes are first formed on one side of the silicon wafer. The most common process for this operation uses a deep reactive-ion etching (DRIE) process The via ablation process is also known as ‘pulsed’ or ‘time-multiplexed’ etching, a process that alternates repeatedly between two modes to achieve nearly vertical hole structures. During the pulsed etching process a passivation layer is naturally formed onto the vias sidewall to block further chemical attack and to prevent additional etching within the via sidewall. These etch/deposit steps are repeated until the ablation reaches the desired depth
Although it is possible to etch via holes all the way through the silicon base, it is common practice to stop the etching process at a predetermined depth that will better promote via filling during the metalization process.
In preparation for via filling a seed layer of copper or tungsten is first applied to enable electroplating the additional copper required to complete the via fill operation. Electroplating is commonly employed for via sizes that range between 5μm and 20μm. To finally access the metallized Cu filled vias on the opposite surface of the wafer, a combination of grinding and/or plasma etching processes are utilized. Further pattern plating processes are finally employed to provide surface interconnect features as illustrated
Because of its low resistivity and conductive characteristics, copper (Cu) has become the favored alloy for interposer via and circuit plating. In preparation for forming the Cu component termination sites (land patterns) and conductors on the silicon wafer surface, the fabricator will first sputter a metal alloy adhesion layer on the wafers surface. Adhesion-promoting metals include: nickel (Ni), molybdenum (Mo), chromium (Cr), tungsten (W), and titanium (Ti). These base materials are then over-plated with a more conductive metal such copper, gold, tin and palladium. Following the pattern plating the remaining thin adhesion layer is chemically etched from the silicon wafer surface followed by the application of a photo-imaged passivation 60μm
contact features located on the individual die elements may have a pitch as small as 30μm to 50μm, while the contacts on the bottom surface of the Si interposer are ‘fanned out’ to a wider 150μm to 200μm pitch. The illustration shown in Figure 9 is typical of silicon or glass interposer enabled 3D system level product with related but heterogeneous semiconductor die elements.
The wider pitch contact pattern on the bottom surface of the Si-based interposer will better accommodate solder ball or solder bump contacts for reflow solder attachment to the top surface of the organic based package substrate.
Three accepted methodologies for joining high-density semiconductors to the silicon-based interposer include 1) solder reflow processing, 2) thermo-compression bonding and 3) annealed copper bond interconnect
Reflow soldering- The contact furnished for the very fine-pitch die-to-interpose attachment process is a ‘solder capped’ copper post or micro-bump contact. Key solder process issues include optimizing reflow temperature profiles, flux activation and time above liquidus (TAL). Because the standoff dimension between die and interposer surface can be 50 microns or more, underfill is commonly specified to reinforce the site. Flux selection can also be a factor. Any remaining flux residue that accumulates on the interposer surface during the solder process can promote excessive voids in the underfill.
Thermo-Compression Bond (Cu/Sn/Cu Fusion)- A two-stage procedure that begins with the initial precise alignment and room temperature pre-bonding of the die element to the interposer wafer. Following pre-bond, the interposer is exposed to an annealing process that includes high temperature and pressure. This joining process is significantly enhanced with the deposition of a thin layer of tin-alloy onto the exposed copper contact features. When the wafer interposer is heated to approximately 400oC, the tin alloy layer completely diffuses into the apposing copper contact features to form a stable Cu-Sn- Cu (Cu3Sn) intermetallic.
Low Temperature Hybrid Bond Technology- A heterogeneous or hybrid joining process furnishing an In-Situ electrical interface with patterned metal alloy contact surfaces and silicon oxide dielectric (e.g., Cu/SiO-Cu/SiO, Cu/SiN-Cu/SiN). This is a simple Cu-Cu bond that is scalable to a much finer contact pitch (< 30μm). Furthermore, when the die element is bonded
to the silicon interposer there is no remaining air gap so application of underfill between surfaces is not required. The direct bond interconnect process is also being utilized for thin wafer-to-wafer joining as well as joining singulated die prepared with aligned TSV contact features. The actual Cu-Cu annealing process for this requires a relatively short exposure time at a moderate 200 oC temperature.
Summary and Conclusions
While developers continue to explore alternative semiconductor package assembly methods to further improve yield, significant challenges remain for the newer generations of high-density and high I/O semiconductors. Although high volume consumer electronics will continue to drive similar forms of 3D package technology, high-end Telecom markets will rely on more sophisticated solutions. New generations of memory products have emerged with 30 micron pitch and two-thousand I/O and processors are entering the market that have forty-thousand I/O. To meet the requirement for interconnecting these very large, high I/O die elements, analysts and industry roadmaps predict that companies will continue to migrate toward silicon-based or glass-based interposer technology. Although many process issues have been resolved, there are a significant number of technical issues that influence this segment of the industry. The handling and transport of the large and very thin wafers, solutions for aligning and joining very high I/O die elements, and, when the system level package is incorporated into the end product, methodologies for managing thermal dissipation.
The decision on which interposer base material is selected will be dependent on process maturity, supplier capability and cost. In order to expedite product development many are partnering with suppliers at both the frontend and backend of the semiconductor supply chain. They realize that in order to bring 2.5D and 3D package technology into the forefront they will need to develop viable and robust, high yield wafer level interposer processes.
